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SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBF0130R
Io = 100 mA VR = 30 Volts
(RoHS Device)
Features
Low reverse current . Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction.
1005(2512)
0.102(2.60) 0.095(2.40)
0.051(1.30) 0.043(1.10)
Mechanical data
0.035(0.90)
Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BQ Mounting position: Any Weight: 0.006 gram(approx.).
0.027(0.70)
0.020(0.50) Typ.
0.012 (0.30) Typ.
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Storage temperature Junction temperature
Conditions
Symbol Min Typ Max Unit
VRRM VR IO 35 30 100 V V mA
8.3ms single half sine-wave superimposed on rate load(JEDEC method)
IFSM TSTG Tj -40
1 +125 +125
A
O
C C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
O
Parameter
Forward voltage Reverse current IF = 10 mA VR = 10 V
Conditions
Symbol Min Typ Max Unit
VF IR 0.45 0.5 V uA
REV:A
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Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBF0130R)
Fig. 1 - Forward characteristics
1000 1m
125 C
O
Fig. 2 - Reverse characteristics
Forward current (mA )
100
Reverse current ( A )
100u
10u
75 C
O
10
C
O
1u
25 C
O
5
12
C
100n
-25 C
O
O
75
25
O
C
1
C
O
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-25
10n 1n 0 5 10
15
20
25
30
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between terminals characteristics
Capacitance between terminals (PF)
100
Fig.4 - Current derating curve
Average forward current(%)
f = 1 MHz Ta = 25 C
100
80
10
60
40
20
1 0 5 10 15 20 25 30
0 0 25 50 75 100
O
125
Reverse voltage (V)
Ambient temperature ( C)
Fig. 5 - VF Dispersion map
360
O
Fig. 6 - IR Dispersion map
1000 900
O
Fig. 7 - CT Dispersion map
50
O
Ta=25 C IF=10mA n=30pcs
Ta=25 C VR=10V n=30pcs
45
Capacitance between terminals(pF)
Forward voltage (mV)
Reverse current (nA)
350
800 700 600 500 400 300 200 100
AVG:111nA
40 35 30 25 20 15 10 5 0
AVG:18.8pF
Ta=25 C F=1MHz VR=0V n=10pcs
340
330
AVG:335mV
320
310
0
REV:A
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Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
P0 P1 d Index hole E T
F B
Polarity
W C
P
A
12 0
o
D2
D1 D
W1
Trailer ....... .......
10 pitches (min)
Device ....... ....... ....... .......
Leader ....... .......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.55 0.10
0.061 0.004
B
2.65 0.10
0.104 0.004
C
1.05 0.10
0.041 0.004
d
1.55 0.05
0.061 0.002
D
178 1
7.008 0.04
D1
60.0 MIN.
2.362 MIN.
D2
13.0 0.20
0.512 0.008
F/1005
(mm) (inch)
SYMBOL
E
1.75 0.10
0.069 0.004
F
3.50 0.05
0.138 0.002
P
4.00 0.10
0.157 0.004
P0
4.00 0.10
0.157 0.004
P1
2.00 0.05
0.079 0.004
T
0.23 0.05
0.009 0.002
W
8.00 0.20
0.315 0.008
W1
13.5 MAX.
0.531 MAX.
F/1005
(mm) (inch)
REV:A
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Page 3
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Park Number CDBF0130R Marking Code
BQ
BQ
Suggested PAD Layout
F/1005 SIZE (mm) A B C D E 2.10 1.20 1.20 3.30 0.90 (inch) 0.083 0.047 0.047
C D A E
0.130
B
0.035
Standard Package
Qty per Reel Case Type (Pcs) F/1005 4000 Reel Size (inch) 7
REV:A
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Comchip Technology CO., LTD.

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